Contrast Enhancement of Polished Cross Sections of Semiconductor Structures – Sample Preparation for SEM

http://www.leica-microsystems.com/science-lab/contrast-enhancement-of-polished-cross-sections-of-semiconductor-structures-sample-preparation-for-sem/

Application Note for Leica EM RES102 – The surfaces of polished cross sections often show fine scratches and residues of the removed material or of the abrasive material. The artefacts are strongly material-dependent, and are mostly only detectable at higher resolutions in the scanning electron microscope. A further problem arises from the fact that the ground section mostly only has low contrast, i.e., in the structures of the semiconductor materials are very difficult to discern. With the use of ion beam milling, the ground sections of semiconductor structures can be “contrasted”.

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